Search results for " Ni"
showing 10 items of 3074 documents
Archeologia dziewiętnastowiecznej pamięci w insurekcyjnym tryptyku Jarosława Iwaszkiewicza ("Noc czerwcowa", "Zarudzie", "Heydenreich")
2013
Three short “insurrection” stories written by Jarosław Iwaszkiewicz in the years 1963–1974 have inspired various interpretations; it seems, however, that there are still many undeciphered codes, references, and allusions. The author’s metatextual comments as well as the implicit poetics of the stories make it possible to consider them as a dialogue with the historical, cultural and aesthetic heritage of the 19th century: as a form of its literary archeology. The article deals with many literary and aesthetic conventions employed in the stories, with the emphasis on the concept of sérénité and on various associations with 19th-century art. Notably, the scope of analysis includes such motifs …
Przyczynek do kwestii estetycznej około roku 1897
2017
A ąuestionnaire on “the essence and goal of a novel” published in 1897 in “Kurier Niedzielny” is an interesting documentation of aesthetic views of writers and literary critics in the late 19th century. Representatives of all literary generations of that time - from pre-positivists through two generations of Polish positivists to Young Poland writers - speak in favor of moderate aestheticism protesting against bias in literaturę and defend the autonomy of an artist. Quotes from participants exhibit good command of both idealistic (post-Hegel) aesthetic tradition and emotionalistic concepts of Positivism. They also foreshadow aesthetic predilection of Modemism. They do not provide an in-dept…
CCDC 664106: Experimental Crystal Structure Determination
2010
Related Article: A.Ray, C.Rizzoli, G.Pilet, C.Desplanches, E.Garribba, E.Rentschler, S.Mitra|2009|Eur.J.Inorg.Chem.||2915|doi:10.1002/ejic.200900188
Comparative Theoretical Analysis of BN Nanotubes Doped with Al, P, Ga, As, In, and Sb
2013
SUMMARY AND CONCLUDING REMARKS We have performed large-scale first-principles calculations ofthe electronic structure of (5,5) boron nitride nanotubescontaining the following substitutional impurity atoms: Al, P,Ga, As, In, and Sb. Calculations have been performed using thetwo methods: (i) linear combination of atomic orbitals(LCAO) with the atomic-centered Gaussian-type functions asa basis set and (ii) linearized augmented cylindrical wave(LACW) accompanied with the local density functional andmuffin-tin approximations for the electronic potential. In arelatively good qualitative agreement, both methods predict lowformation energies and, thus, relative stability of point defectsthat are assoc…
Bandgap behavior and singularity of the domain-induced light scattering through the pressure-induced ferroelectric transition in relaxor ferroelectri…
2018
[EN] In this letter, we have investigated the electronic structure of A(x)Ba(1-x)Nb(2)O(6) relaxor ferroelectrics on the basis of optical absorption spectroscopy in unpoled single crystals with A = Sr and Ca under high pressure. The direct character of the fundamental transition could be established by fitting Urbach's rule to the photon energy dependence of the absorption edge yielding bandgaps of 3.44(1) eV and 3.57(1) eV for A = Sr and Ca, respectively. The light scattering by ferroelectric domains in the pre-edge spectral range has been studied as a function of composition and pressure. After confirming with x-ray diffraction the occurrence of the previously observed ferroelectric to pa…
Anomalies of dielectric properties and conductivity in single domain LiNbO3:Zn crystals
2016
ABSTRACTA study of the temperature dependence of dielectric constant, conductivity, and piezoelectric modulus in the single-domain state of LiNbO3 crystals modified by Zn admixture at threshold concentration is reported. Unipolarity of the LiNbO3:Zn crystals is observed to increase after treatment of brand-new samples by high-temperature electro-diffusion annealing and by subsequent high-temperature annealing of short-circuited samples. The observed effects are explained as a result of meta-stable residual domains collapsing at high temperature the collapse being assisted by disintegration of charged clusters stabilizing domain walls. The rise of unipolarity is accompanied by anomalies on t…
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
2019
Abstract In this paper, the electrical behavior of a Ni/Au Schottky barrier on free standing GaN has been studied employing a variety of techniques and correlated with the material and interface quality. The temperature dependence of the ideality factor (n) and of the Schottky barrier height (ΦB) revealed a spatial inhomogeneity of the barrier. This behavior has been described by means of the Tung's model on inhomogeneous Schottky barriers. The origin of the barrier inhomogeneity can be likely associated to the surface quality of the GaN epilayer or to microstructure of the Ni/GaN interface.
Preparation and dielectric properties of (Na 0.5 K 0.5 )NbO 3 ceramics with ZnO and CdO addition
2019
The sintering conditions, phase structure, and electrical properties of the ZnO and CdO doped (Na0.5K0.5)NbO3 (NKN) ceramics were investigated and discussed. All the samples were prepared by a solid state reaction method. The addition of 1 wt% CdO and ZnO as a sintering aid increases the density and lowering the sintering temperature. XRD analysis indicated perovskite structure with monoclinic symmetry. The investigated samples are good quality, the grains are well shaped without a glassy phase. The results of dielectric measurements revealed, that the dielectric properties of NKN based ceramics are stable in the wide temperature range.
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Radiation resistance of nanolayered silicon nitride capacitors
2020
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…